SPM Sample Images
LT UHV SPM USM1200
STM Topographic Image of Si (100)
STM Molecular Structure and Topographic Image of COOH-Porphyrin-Tetramer
3He LT UHV SPM with SC Magnet USM1300
STM Topographic Image of Si (111)
Tempetature: 4.2 K
Bias Voltage: 0.84 V
Tunnel Current: 1.04 nA
Field of View: 10 nm × 10 nm
Yutaka Miyatake, Unisoku Co., Ltd.
STM Topographic Image of Vortex Lattice of a Superconductor NbSe2
Temperature: 400 mK
Field: 0.5 T
Environment: UHV
Field of View: 250 nm × 250 nm
Dr. HANAGURI in Magnetic Materials Laboratory, RIKEN
STM Topographic Image and STS Data of Cleaved NbSe2
Temperature: 440 mK
Field of View: 7.3 nm × 7.3 nm
Dr. HANAGURI in Magnetic Materials Laboratory, RIKEN
Si (111) dI/dV Topographic Image in Magnetic Field (4.2 K, 7 T) USM1300 4He
STM Topographic Image in 11 Tesla at 400 mK by USM1300 3He
Si (001) STM Topographic Image by USM1300 3He
Add the atomic structure model
N type Si (100), 0.008–0.015 Ω cm
V = +1.7 V, I = 70 pA, 668.7 mK
Keisuke Sagisaka, NIMS, Fujita Group
published in VOLUME 91, NUMBER 14, 146103
PHYSICAL REVIEW LETTERS
Standing Wave on Cu (111) Surface by USM1300S VTI
VT UHV SPM USM1400
STM Topographic Image of Si (111) Surface
Temperature: 83 K
Scan Area: 22 nm × 22 nm
Sample Bias: 1.8 V
Tunnel Current: 0.54 nA
UNISOKU Co., Ltd.
STM Topographic Image of Si (100) Surface
Temperature: 83 K
Scan Area: 12 nm × 5 nm
Sample Bias: 1.2 V
Tunnel Current: 1.0 nA
UNISOKU Co., Ltd.
Temperature: 83 K
Scan Area: 20 nm × 20 nm
Sample Bias: -2 V
Tunnel Current: 0.2 nA
UNISOKU Co., Ltd.
Temperature: 83 K
Scan Area: 20 nm × 20 nm
Sample Bias: 2 V
Tunnel Current: 0.2 nA
UNISOKU Co., Ltd.
VT UHV 4-Probe SPM USM1400-4P
4 Point Measurement
STM Image on HOPG at 6.5 K
Resistance of Micro Structure
4-Nano-Probe System for SEM UMP-1000
Four Probes Over Carbon Nanotube
Four-terminal Resistance measuremaent on Carbon Nanotube
Probe distance: < 10 µm
Prof. Sumiyama, Nagoya Institure of Technology