Top Page SPM Products > SPM Sample Images

SPM Sample Images

LT UHV SPM USM1200

STM Topographic Image of Si (100)

Temperature: 63 K
Field of View: 3 nm × 3 nm
Dr. YOKOYAMA in Yokohama City Univ.

STM Molecular Structure and Topographic Image of COOH-Porphyrin-Tetramer

Temperature: 63 K
Field of View: 11 nm × 11 nm
Dr. YOKOYAMA in Yokohama City Univ.


3He LT UHV SPM with SC Magnet USM1300

STM Topographic Image of Si (111)

Tempetature: 4.2 K
Bias Voltage: 0.84 V
Tunnel Current: 1.04 nA
Field of View: 10 nm × 10 nm
Yutaka Miyatake, Unisoku Co., Ltd.

STM Topographic Image of Vortex Lattice of a Superconductor NbSe2

Temperature: 400 mK
Field: 0.5 T
Environment: UHV
Field of View: 250 nm × 250 nm
Dr. HANAGURI in Magnetic Materials Laboratory, RIKEN

STM Topographic Image and STS Data of Cleaved NbSe2

Temperature: 440 mK
Field of View: 7.3 nm × 7.3 nm
Dr. HANAGURI in Magnetic Materials Laboratory, RIKEN

Si (111) dI/dV Topographic Image in Magnetic Field (4.2 K, 7 T) USM1300 4He

Topo Image - Sample Bias 2.1 V Tunnel Current 1.24 nA

dI/dV Image - Sample Bias 1.2 V Tunnel Current 1.24 nA

dI/dV-V curve on Si atoms

STM Topographic Image in 11 Tesla at 400 mK by USM1300 3He

Scan Size: 11.7
Sample bias: 2.07 V
Tunnel Current: 740 pA

Si (001) STM Topographic Image by USM1300 3He

Add the atomic structure model
N type Si (100), 0.008–0.015 Ω cm
V = +1.7 V, I = 70 pA, 668.7 mK
Keisuke Sagisaka, NIMS, Fujita Group
published in VOLUME 91, NUMBER 14, 146103
PHYSICAL REVIEW LETTERS

Standing Wave on Cu (111) Surface by USM1300S VTI

Yukio Hasegawa Group, Univ. of Tokyo, Solid State Physics


VT UHV SPM USM1400

STM Topographic Image of Si (111) Surface

Temperature: 83 K
Scan Area: 22 nm × 22 nm
Sample Bias: 1.8 V
Tunnel Current: 0.54 nA
UNISOKU Co., Ltd.

STM Topographic Image of Si (100) Surface

Temperature: 83 K
Scan Area: 12 nm × 5 nm
Sample Bias: 1.2 V
Tunnel Current: 1.0 nA
UNISOKU Co., Ltd.


Temperature: 83 K
Scan Area: 20 nm × 20 nm
Sample Bias: -2 V
Tunnel Current: 0.2 nA
UNISOKU Co., Ltd.


Temperature: 83 K
Scan Area: 20 nm × 20 nm
Sample Bias: 2 V
Tunnel Current: 0.2 nA
UNISOKU Co., Ltd.


VT UHV 4-Probe SPM USM1400-4P

4 Point Measurement

UNISOKU Co., Ltd.

STM Image on HOPG at 6.5 K

UNISOKU Co., Ltd.

Resistance of Micro Structure

UNISOKU Co., Ltd.


4-Nano-Probe System for SEM UMP-1000

Four Probes Over Carbon Nanotube

Four-terminal Resistance measuremaent on Carbon Nanotube
Probe distance: < 10 µm
Prof. Sumiyama, Nagoya Institure of Technology

SEM Image of 4 Probes below 10 K

Scan Area: 1 mm × 1 mm
Temperature: 6.5 K
UNISOKU Co., Ltd.


Scan Area: 15 µm
Temperature: 6.5 K
UNISOKU Co., Ltd.

Cutting CNT by 2 Probes

Applying a voltage across the probes
M. Yoshimura, Ueda Lab., Toyota Technological Institute


Advanced HV-STM System HS-1000

STM Image of Mn Porpyrin Molecules on Au (111)

Scan Size: 10 nm × 10 nm
Sample Bias: 1.2 V
Tunnel Current: 10 pA
UNISOKU Co., Ltd.

STM Image of Au (111) Herringbone Structure

Scan Size: 180 nm × 90 nm
UNISOKU Co., Ltd.

STM Atomic Image of Si (111) 7 × 7 Structure

Scan Size: 12.8 nm × 5.1 nm
UNISOKU Co., Ltd.

STM Atomic Image of √3 × √3 - Ag Structure on Si (111)

Scan Size: 12 nm × 12 nm
Sample Bias: -0.4 V
Tunnel Current: 0.7 nA
UNISOKU Co., Ltd.


Extreme Physical Fields Scanning Probe Microscope

AFM Topographic Image of Si (111) Surface

Figure: Si (111) 7 × 7 by NC-AFM
Scan Size: 13 nm × 13 nm
Cantilever: Piezo Resistive type (made by SII)
Frequency shift: -33 Hz
Ichiro Shiraki, NIMS, Miki group