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Sputter Ion Gun IB-103

This control electronics is deigned for cleaning the sample or the probe by Ion sputtering in UHV.

Sputter Ion Gun IB-102 picture

Specification of IB-103

Accelerating Voltage3 kV max
Emission Current0-30 mA
Beam Size ≤10 mmφ
Raster Area6mm×6mm
Operationg Pressure≤5×10-5 Torr
Breakout Temperature≤200°C
Mounting Flangeφ70 ICF
Variable Leak Valve Input
Connection Flange
φ34 ICF
Working Distance100-150mm
Power SourceAC100V(50/60Hz)
Basic ComponentSputter Ion Gun : 1
Controller Electronics : 1
Cable : 1

Electron-beam Heater for STM Tip EB-101

Compact electron beam gun and power supply for STM tip cleaning in UHV. Thermal electrons from a tungsten filament are focused on the STM tip.

Electron-beam Heater for STM Tip   EB -101 Picture

Specification of EB-101

FilamentTungsten
Accelerationg Voltage1.5kV max
Emission Current0-5 mA
Vacuum Requirement1×10-5 Torr
Mounting Flangeφ70 ICF
Linear Motion Stroke50.8 mm
Basic ComponentElectron Beam Gun : 1
Power Supply : 1
Cable : 1
Exchange Filament (U200-1030) : 1

Electron Beam Power Supply for Sample Heating EB-401

It is suitable for the sample heating by electron bombardment. Up to 1500 voltage is able to be applied across the sample and tungsten filament in UHV.

Electron Beam Power Supply for Sample Heating   EB-401 picture

Specification of EB-401

Power SourceAC100V(50/60Hz)
Output Voltage1000/1500V
Emission Current
Filament Power SupplyDC12V max.5A
Basic ComponentPower Supply : 1

Electrochemical Etching System for STM Tip UTE-1001

STMIt makes tip sharpened by electrochemical Etching for STM.

Electrochemical Etching System for STM Tip   UTE-1001 picture

Specification of UTE-1001

Input PowerAC100V 50/60Hz
Voltage SettingDC0-12V
Stop Current0-3mA
Tip MaterialTungsten(φ0.3mm)
Tip Curvature Radiustens of nano meter
Basic ComponentMain Unit : 1
Power Supply : 1
Cable : 1
Electrochemical Cell : 1
Cell Table : 1
Accessories : 1
Nipple Bulb 2.2V : 2
Tungsten Wire (f0.3mm×30mm) : 3

Lock-in Amplifier for Modulation Measurement U100-1025P

It provides a certain frequency nodulation to a bias voltage probe sample gap.

Lock-in Amplifier for Modulation Measurement   U100-1025P picture

Specification of U100-1025P

Modulation voltage0-2mV,0-20mV changeable
Modulation frequency2-20kHz changeable
Input sensitivityx1-x1000 changeable in 7steps
Output gainx1-x500 changeable in 6steps
Output offset±10V changeable
Detection modef and 2f changeable
Input voltage100V AC(50/60Hz)
Consumption power≤100W
Basic ComponentMain Unit : 1

K-Cell Evaporator U100-1000

Knudsen cell evaporator heats and deposits the material on the target surface in Ultra High Vacuum temperature. The temperature range is from 300°C to 1000°C.

K-Cell Evaporator   U100-1000 picture

Specification of U100-1000

Heaterφ0.5mm tungsten
Flange SizeICFφ70mm
Thermo-CoupleAlmelu-cromel
Crucible CapacityMax.(0.3cc)
Operating temperature300°C-1000°C
Allowable Current11A
Basic ComponentMain Unit : 1
Cable with thermo-couple wire : 1
(Excusive cable for U100-1000)
Crucible : 1
(Excluded the power supply and the temperature regulator)