This control electronics is deigned for cleaning the sample or the probe by Ion sputtering in UHV.

| Accelerating Voltage | 3 kV max |
|---|---|
| Emission Current | 0-30 mA |
| Beam Size | ≤10 mmφ |
| Raster Area | 6mm×6mm |
| Operationg Pressure | ≤5×10-5 Torr |
| Breakout Temperature | ≤200°C |
| Mounting Flange | φ70 ICF |
| Variable Leak Valve Input Connection Flange | φ34 ICF |
| Working Distance | 100-150mm |
| Power Source | AC100V(50/60Hz) |
| Basic Component | Sputter Ion Gun : 1 |
|---|---|
| Controller Electronics : 1 | |
| Cable : 1 |
Compact electron beam gun and power supply for STM tip cleaning in UHV. Thermal electrons from a tungsten filament are focused on the STM tip.

| Filament | Tungsten |
|---|---|
| Accelerationg Voltage | 1.5kV max |
| Emission Current | 0-5 mA |
| Vacuum Requirement | 1×10-5 Torr |
| Mounting Flange | φ70 ICF |
| Linear Motion Stroke | 50.8 mm |
| Basic Component | Electron Beam Gun : 1 |
|---|---|
| Power Supply : 1 | |
| Cable : 1 | |
| Exchange Filament (U200-1030) : 1 |
It is suitable for the sample heating by electron bombardment. Up to 1500 voltage is able to be applied across the sample and tungsten filament in UHV.

| Power Source | AC100V(50/60Hz) |
|---|---|
| Output Voltage | 1000/1500V |
| Emission Current | |
| Filament Power Supply | DC12V max.5A |
| Basic Component | Power Supply : 1 |
|---|
STMIt makes tip sharpened by electrochemical Etching for STM.

| Input Power | AC100V 50/60Hz |
|---|---|
| Voltage Setting | DC0-12V |
| Stop Current | 0-3mA |
| Tip Material | Tungsten(φ0.3mm) |
| Tip Curvature Radius | tens of nano meter |
| Basic Component | Main Unit : 1 |
|---|---|
| Power Supply : 1 | |
| Cable : 1 | |
| Electrochemical Cell : 1 | |
| Cell Table : 1 | |
| Accessories : 1 | |
| Nipple Bulb 2.2V : 2 | |
| Tungsten Wire (f0.3mm×30mm) : 3 |
It provides a certain frequency nodulation to a bias voltage probe sample gap.

| Modulation voltage | 0-2mV,0-20mV changeable |
|---|---|
| Modulation frequency | 2-20kHz changeable |
| Input sensitivity | x1-x1000 changeable in 7steps |
| Output gain | x1-x500 changeable in 6steps |
| Output offset | ±10V changeable |
| Detection mode | f and 2f changeable |
| Input voltage | 100V AC(50/60Hz) |
| Consumption power | ≤100W |
| Basic Component | Main Unit : 1 |
|---|
Knudsen cell evaporator heats and deposits the material on the target surface in Ultra High Vacuum temperature. The temperature range is from 300°C to 1000°C.

| Heater | φ0.5mm tungsten |
|---|---|
| Flange Size | ICFφ70mm |
| Thermo-Couple | Almelu-cromel |
| Crucible Capacity | Max.(0.3cc) |
| Operating temperature | 300°C-1000°C |
| Allowable Current | 11A |
| Basic Component | Main Unit : 1 |
|---|---|
| Cable with thermo-couple wire : 1 (Excusive cable for U100-1000) | |
| Crucible : 1 (Excluded the power supply and the temperature regulator) |