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Time-resolved scanning tunneling microscopy system

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USM1400 Based・Time-resolved scanning tunneling microscopy system

Collaboration with Prof. Shigekawa group (University of Tsukuba)
This project was supported by A-STEP, JST.



Features

Compact optical pump-probe system

Temporal resolution ~ 80 ps
Easy operation & maintenance
Stable laser illumination on sample surface
Integration into an existing STM system possible
※The optical system alone can be purchased.

Nanoscale carrier dynamics measurement

Spatial resolution ~ 1 nm
Long-term time-resolved measurements (~ 1 day)



Performance test1:Time-resolved tunneling current of low temperature grown GaAs (T = 300 K) Time-resolved tunneling spectrum of low temperature grown GaAs Performance test2:Relaxation time mapping of GaAs(110) surface (T = 6 K) Relaxation time mapping of GaAs(110) surface (T = 6 K)

Applications

Semiconductor surfaces, heterostructures
Transition metal dichalcogenides
Photocatalytic materials
Solar cell materials, etc.





Time-resolved multiprobe microscopy system

Inside of Time-resolved multiprobe microscopy system

Carrier dynamics measurement of micro samples on insulating substrate

Sample and probe observation using a long-focus microscope
Independent control of four probes
Gate voltage application possible

Demo measurement conditions

Temperature: 77 K or 300 K
Pressure: ~10-8 Pa
Laser wavelength: 488, 532 nm
Temporal resolution: ~80 ps (532 nm), ~10 ns (488 nm)

Time-resolved tunneling current of monolayer MoS2 (T = 300 K)
Time-resolved tunneling current of monolayer MoS2 Time-resolved tunneling current 
of monolayer MoS2



Feel free to contact us about the details of demo measurements.


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