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Time-resolved scanning tunneling microscopy system


USM1400 Based・Time-resolved scanning tunneling microscopy system

✔Collaboration with Prof. Shigekawa group (University of Tsukuba)
✔This project was supported by A-STEP, JST.


Features

Compact optical pump-probe system

●Temporal resolution ~ 80 ps
●Easy operation & maintenance
●Stable laser illumination on sample surface
●Integration into an existing STM system possible
※The optical system alone can be purchased.

Nanoscale carrier dynamics measurement

●Spatial resolution ~ 1 nm
●Long-term time-resolved measurements (~ 1 day)

Performance test1:Time-resolved tunneling current of low temperature grown GaAs (T = 300 K) Time-resolved tunneling spectrum of low temperature grown GaAs Performance test2:Relaxation time mapping of GaAs(110) surface (T = 6 K) Relaxation time mapping of GaAs(110) surface (T = 6 K)

Applications

●Semiconductor surfaces, heterostructures
●Transition metal dichalcogenides
●Photocatalytic materials
●Solar cell materials, etc.




Time-resolved multiprobe microscopy system

Inside of Time-resolved multiprobe microscopy system

Carrier dynamics measurement of micro samples on insulating substrate

●Sample and probe observation using a long-focus microscope
●Independent control of four probes
●Gate voltage application possible

Demo measurement conditions

●Temperature: 77 K or 300 K
●Pressure: ~10-8 Pa
●Laser wavelength: 488, 532 nm
●Temporal resolution: ~80 ps (532 nm), ~10 ns (488 nm)
Time-resolved tunneling current of monolayer MoS2 (T = 300 K)
Time-resolved tunneling current of monolayer MoS2 Time-resolved tunneling current of monolayer MoS2

Feel free to contact us about the details of demo measurements.


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